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| www..com AP4920M Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching D1 G2 S2 D2 D1 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 25m 7A SO-8 S1 G1 Description D1 D2 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 Rating 25 20 7 5.7 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Continuous Drain Current3 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 20020305 www..com AP4920M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 25 1 0.037 25 35 3 1 25 - V V/ m m V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7A VGS=4.5V, ID=5.2A 14 10.5 1.9 7.5 8 9.5 25 13.5 395 260 105 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=7A VDS=25V, VGS=0V VDS=20V, VGS=0V VGS=20V ID=7A VDS=15V VGS=4.5V VDS=15V ID=1A RG=6,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V Tj=25, IS=2.1A, VGS=0V Min. Typ. Max. Units 1.67 1.2 A V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on Min. copper pad. www..com AP4920M 20 20 15 10V 8.0V 6.0V 5.0V V GS = 4 .0V ID , Drain Current (A) 15 10V 8.0V 6.0V 5.0V V GS = 4 .0V ID , Drain Current (A) 10 10 5 5 T C =25 o C 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 5 T C =150 o C 6 7 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 50 1.8 I D =7A T C =25 40 1.6 I D =7A V GS =10V 30 Normalized RDS(ON) 3 4 5 6 7 8 9 10 11 1.4 RDS(ON) (m ) 1.2 1.0 20 0.8 10 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature www..com AP4920M 8 3 7 6 2 5 ID , Drain Current (A) 4 3 1 2 1 PD (W) 0 25 50 75 100 125 150 0 50 100 150 0 T c , Case Temperature ( C) o T c ,Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 Normalized Thermal Response (Rthja) 0.2 10 1ms 10ms ID (A) 1 0.1 0.1 0.05 0.02 100ms 1s 0.01 P DM 0.01 t T Single Pulse 0.1 10s T C =25 C Single Pulse o Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135 oC/W DC 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance www..com AP4920M 12 10000 f=1.0MHz 10 I D =7A V DS =15V VGS , Gate to Source Voltage (V) 8 1000 6 C (pF) Ciss Coss 100 4 Crss 2 0 0 2 4 6 8 10 12 14 16 18 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100.00 3 2.5 10.00 2 1.00 VGS(th) (V) T j =150 C IS(A) o T j =25 C o 1.5 1 0.10 0.5 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 -50 0 50 100 150 V SD (V) T j ,Junction Temperature ( o C) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature www..com AP4920M VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.6x RATED VDS RG G + 10V - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 4.5V D 0.6 x RATED VDS G S + QGS VGS QGD 1~ 3 mA I G I D Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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